Influence of wide band gap oxide substrates on the photoelectrochemical properties and structural disorder of CdS nanoparticles grown by the successive ionic layer adsorption and reaction (SILAR) method

• Mikalai V. Malashchonak,
• Alexander V. Mazanik,
• Olga V. Korolik,
• Еugene А. Streltsov and
• Anatoly I. Kulak

Beilstein J. Nanotechnol. 2015, 6, 2252–2262, doi:10.3762/bjnano.6.231

• ; semiconductor photoelectrochemistry; wide band gap oxide; Introduction Quantum dot sensitized solar cells (QDSSCs) utilize light absorbed by semiconductor nanoparticles (CdS, CdSe, CdTe, PbS, etc.) deposited on wide band gap oxide (WBGO) scaffolds (TiO2, ZnO, In2O3) which act as a photoanode [1][2][3][4][5][6